Si4914BDY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
D u ty Cycle = 0.5
0.2
0.1
0.1
0.05
N otes:
P DM
t 1
t 1
t 2
0.02
t 2
1. D u ty Cycle, D =
2. Per Unit Base = R thJA = 115 °C/ W
0.01
Single P u lse
3. T JM - T A = P DM Z thJA(t)
4. S u rface Mo u nted
10 -4
10 -3
10 -2
10 -1
1
10
100
1000
Sq u are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
1 0
Sq u are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69654 .
Document Number: 69654
S09-2109-Rev. E, 12-Oct-09
www.vishay.com
11
相关PDF资料
SI4914DY-T1-E3 MOSFET DUAL N-CH 30V 8-SOIC
SI4916DY-T1-GE3 MOSFET DUAL N-CH 30V 8-SOIC
SI4920DY-T1-GE3 MOSFET DUAL N-CH 30V 8-SOIC
SI4932DY-T1-GE3 MOSFET N-CH DUAL 30V 8-SOIC
SI4933DY-T1-GE3 MOSFET P-CH DUAL 12V 8-SOIC
SI4936CDY-T1-E3 MOSFET 2N-CH 30V 5.8A SO8
SI4940DY-T1-GE3 MOSFET N-CH DUAL 40V 8-SOIC
SI4943BDY-T1-GE3 MOSFET P-CH D-S 20V 8-SOIC
相关代理商/技术参数
SI4914BDY-T1-GE3 功能描述:MOSFET 30V 8.4A/8A DUAL NCH MOSFET w/Shottky RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4914DY 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4914DY-T1-E3 功能描述:MOSFET DUAL N-CH 30V (D-S) W/SCHOTTKY RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4916DY 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4916DY-T1-E3 功能描述:MOSFET 30 Volt 6.6/8.9 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4916DY-T1-GE3 功能描述:MOSFET 30V 10/10.5A 18mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4920DY 功能描述:MOSFET SO8 DUAL NCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4920DY 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO 制造商:Vishay Siliconix 功能描述:MOSFET DUAL NN SO-8